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周书星博士

作者: 时间:2019-04-02 点击数:

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一、基本信息:

周书星,男,198710月出生于湖北省襄阳市,中共党员。博士,讲师,现任职于湖北文理学院低维光电材料与器件湖北省重点实验室。

二、教育背景和工作经历:

2018/5--至今,湖北文理学院,低维光电材料与器件湖北省重点实验室

2016/6—2018/5,中国科学院新疆理化技术研究所,助理研究员;

2011/9—2016/6,中国科学院上海微系统与信息技术研究所,微电子学与固体电子学,获博士学位;

2007/9—2011/6, 湖北大学,物理与电子科学学院, 电子科学与技术专业,获学士学位;

三、研究方向:

主要从事新型化合物半导体异质集成电子材料与器件及其可靠性研究

四、主持参与的教科研项目

1.国家自然科学基金项目,“电子辐照对InP HEMT二维电子气的影响机理研究”,项目编号:117052772018/01-2020/1234.8万元,在研,主持;

2. 国家自然科学基金项目,“总剂量辐射陷阱电荷对堆叠高k栅介质经时击穿特性的影响机理”,项目编号:118052682019/01-2021/1233.6万元,在研,参与,主要人员;

3.中国科学院重点部署项目,“面向研制过程的XXXXX损伤评估”,2016/08-2018/08, 500万元,在研,参与,主要人员;

4.中国科学院西部之光西部青年学者B类项目,“InPDHBTHEMT材料与器件辐照效应研究”,项目编号:2016-QNXZ-B-102016/09-2020/840万元,在研,主持;

5.电子元器件可靠性物理及其应用技术重点实验室开放基金项目,“应变自组织InAs量子点激光器辐射损伤机理研究”,2017/11-2019/10, 10万元,在研,主持;

 

 

五、发表论文:

1.      Shuxing ZhouQi Guo, Likun Ai, Ming Qi, Anhuai Xu and Shumin Wang“Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy”J Mater Sci, 201853 3537;

2.       Shuxing Zhou, Ming Qi, Likun Ai, Shumin Wang, Anhuai Xu, and Qi Guo "Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy", Jpn. J. Appl. Phys., 2017, 56(3): 035505 Shuxing Zhou, Ming Qi, Likun Ai and Anhuai Xu, “Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures”, Chinese Physics B, 2016, 25(9): 096801

3.      Shuxing Zhou, Ming Qi, Likun Ai, Anhuai Xu and Shumin Wang“Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy” Semicond. Sci. Technol. 201530 125001

4.      ZHOU Shu-Xing , QI Ming , AI Li-Kun , XU An-Huai , WANG Li-Dan Ding Peng  and JIN Zhi“Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based HEMT Structures”Chinese Physics Letter 2015Vol.32, No.9 097101

5.      Likun Ai, Shuxing Zhou, Ming Qi, Anhuai Xu and Shumin Wang“InGaAsBi materials grown by gas source molecular beam epitaxy”Journal of Crystal Growth2017Vol. 477135-138

6.      Shuxing Zhou, Ming Qi, Likun Ai, Anhuai Xu and Shumin Wang, “Growth and Material Properties of InyGa1−yAs1-xBix Thin Films using Gas Source Molecular Beam Epitaxy”, 7th International Workshop on Bismuth-Containing Semiconductors,  24th July, 2016, Shanghai, China

7.      Likun Ai, Anhuai Xu, Shuxing Zhou, Ming Qi, "GSMBE Growth of InGaAsP Step-Graded Composite Collector Structure Applied to DHBT", 2015 International Conference on Optoelectronics and Microelectronics (ICOM), IEEE, 2015:330-333.(EI收录)

8.      Shuxing Zhou, Likun Ai, Teng Teng, Anhuai Xu, Ming Qi Si δ-Doping and Heterointerface Flatness Effects on Electronic Properties of InP-Based HEMT Structures, The 18th International Conference on Molecular Beam Epitaxy, Sept. 7-12, 2014, Flagstaff, A.Z.,USA

9.      Likun Ai, Shuxing Zhou, Anhuai Xu, Ming Qi GSMBE Growth of InP/InGaAs/InP DHBT with fmax>600GHz The 18th International Conference on Molecular Beam Epitaxy, Sept. 7-12, 2014, Flagstaff, A.Z.,USA

 

 

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